npn BUX40 comset semiconductors 1/2 the bux41 is silicon multiepitaxial planar npn transistor in jedec to-3. they are intended for use in switching and linear applications in military and industrial equipment. absolute maximum ratings symbol ratings value unit v ceo collector-emitter voltage i b = 0 125 v v cbo collector-base voltage i e = 0 160 v v ebo emitter-base voltage i c = 0 7 v v cex collector-emitter voltage v be = -1.5v 160 v v cer collector-emitter voltage r be = 100 ? 150 v i c collector current 20 a i cm collector peak current t p = 10ms 28 a i b base current 4 a p t total power dissipation @ t c = 25 120 watts t j junction temperature 200 c t stg storage temperature -65 to +200 c thermal characteristics symbol ratings value unit r thjc thermal resistance, junction to case 1.46 c/w electrical characteristics tc=25c unless otherwise noted symbol ratings test condition(s) min typ mx unit v ceo(sus) collector-emitter sustaining voltage (1) i c =200 ma 125 - - v v eb0 emitter-base voltage i c =0a , i e =50 ma 7 - - v i ceo collector cutoff current v ce =100 v , i b =0a - - 1 ma v ce = v cex , v be = -1.5v - - 1 i cex collector cutoff current v ce = v cex , v be = -1.5v, t case = 125c - - 5 ma i ebo emitter cutoff current v eb =5.0 v, i c =0 - - 1 ma h h i i g g h h c c u u r r r r e e n n t t , , h h i i g g h h s s p p e e e e d d , , h h i i g g h h p p o o w w e e r r t t r r a a n n s s i i s s t t o o r r
npn BUX40 comset semiconductors 3 /2 i c =10 a , v ce =4.0 v 15 - 45 h fe dc current gain (1) i c =15 a , v ce =4.0 v 8 - - - i c =10 a , i b =1 a - 0.6 1.2 v ce(sat) collector-emitter saturation voltage (1) i c =15 a , i b =1.88 a - 0.9 1.6 v be(sat) base-emitter saturation voltage (1) i c =15 a , i b =1.88 a - 1.7 2 v symbol ratings test condition(s)sec min typ mx unit v ce =30 v , t s = 1s 4 - - i s/b second breakdown collector current v ce =50 v , t s = 1s 1 - - a e s/b clamped e s/b collector current v clamp =125 v , l=500 h 15 - - a f t transition frequency v ce =15 v , i c =1 a , f=10 mhz 8 - - mhz t on turn-on time i c =15 a , i b =1.88 a , v cc =30 v - 0.35 1.2 t s storage time - 0.85 1 t f file time i c =15 a , v cc =30 v i b1 = -i b2 =1.88 a - 0.14 0.4 s (1) pulse duration = 300 s, duty cycle <= 2% mechanical data case to-3 dimensions mm inches a 25,51 1,004 b 38,93 1,53 c 30,12 1,18 d 17,25 0,68 e 10,89 0,43 g 11,62 0,46 h 8,54 0,34 l 1,55 0,6 m 19,47 0,77 n 1 0,04 p 4,06 0,16 pin 1 : base pin 2 : emitter case : collector information furnished is believed to be accurate a nd reliable. however, cs assumes no responsability for the consequences of use of such info rmation nor for errors that could appear. data are subject to change without notice.
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